Two Semiconductor Papers from UOS Accepted for IEDM

[Financial News]  Two papers by researchers led by Professors Kang Myung-gon and Kim Ki-wook of the University of Seoul's School of Advanced Convergence Studies have been accepted for the 2026 IEEE International Electron Devices Meeting (IEDM), an international conference on semiconductor devices. This is the first time papers involving UOS researchers as corresponding and first authors have been accepted to IEDM.
The accepted papers address technology for reducing the power consumption of 3D NAND flash and ferroelectric modeling technology for next-generation nonvolatile memory.
The paper on which Professor Kang Myung-gon served as corresponding author proposes a method to reduce the energy consumed during programming and read operations by more than 90% by jointly controlling the threshold-voltage placement and operating conditions of 3D NAND flash. Assistant Professor Kim Ki-wook and master's students Lee Kyung-min and Song Tae-hyun served as co-first authors.
The researchers explained that they reduced energy use while securing resistance to the 'disturb' phenomenon, in which the state of neighboring cells affects the process of reading and writing data. As the number of layers in NAND flash increases, technologies that can manage power consumption and data reliability simultaneously are becoming increasingly important.
The other paper, on which Assistant Professor Kim served as first author, proposes a method for analyzing, with a single model, polarization switching phenomena in two types of ferroelectric thin films with different crystal structures. It also modeled the 'proximity coupling' effect, in which the polarization properties of two ferroelectric materials are enhanced when they are stacked.
Ferroelectric materials are being studied for use in next-generation nonvolatile memory that can retain data even after the power is turned off. The researchers explained that the model could expand the design scope of existing memory devices.
The two studies were conducted jointly with researchers from the University of Notre Dame, Penn State, Samsung Electronics, and SK hynix. The results are scheduled to be presented at IEDM 2026, which will be held in San Francisco in December.
Professor Kang said, "It is meaningful to present at IEDM the research achievements created together with our students and partner institutions." Professor Kim said, "I will contribute to enhancing UOS's semiconductor research capabilities through research on next-generation memory devices."

[email protected] Lee Bo-mi Reporter