SK hynix Unveils Next-Generation Memory Portfolio at Taiwan Semiconductor Manufacturing Company (TSMC) Technology Event

[Financial News] SK hynix has unveiled a next-generation AI memory portfolio spanning high-bandwidth memory (HBM), server DRAM and enterprise solid-state drives (SSDs) at TSMC's Open Innovation Platform event. After putting HBM4 and SOCAMM2, which are installed in NVIDIA's next-generation accelerator Vera Rubin, front and center, the company is also expanding cooperation with TSMC for next-generation AI systems by validating HBM5 (High Bandwidth Memory 5) based on TSMC's advanced packaging technology, Chip on Wafer on Substrate (CoWoS).
SK hynix said on the 28th that it participated in the TSMC Open Innovation Platform (OIP) conference held on the 23rd (local time) in Santa Clara, California, where it shared its next-generation memory portfolio and development strategy. The company also received TSMC's Partner of the Year award for the second consecutive year.
OIP is an open innovation platform operated by TSMC to develop technologies and collaborate with companies that are building the semiconductor ecosystem together. In the second half of each year, TSMC invites OIP participants and key customers to conferences around the world, where they engage in active technology exchanges.
SK hynix has participated in the conference since 2024, introducing its AI memory technology capabilities through exhibitions and presentations.
At this year's exhibition, SK hynix showcased various tiers of memory solutions supporting AI computing and data storage, ranging from HBM to server DRAM and enterprise SSDs.
The product exhibition area was divided into two main displays. The HBM display on the right side of the booth featured NVIDIA's Vera Rubin superchip, along with SK hynix's 36GB 12-high HBM4 and 96GB SOCAMM2 products installed in it. Explanatory text detailing the roles of SK hynix's products in Vera Rubin was also placed nearby to help visitors better understand them.
The actual 36GB 12-high HBM4 product is directly integrated around the Rubin GPU core, serving as a high-bandwidth data pathway that eliminates data-transfer delays arising from complex matrix calculations. SOCAMM2 operates as the main system memory for the Rubin central processing unit (CPU), supporting the complex computations and resulting data transfers that allow AI agents to immediately reflect even the context of long conversations in their responses.
Arranged around the superchip were key HBM products, including HBM4E 48GB 12-high, HBM4 48GB 16-high and HBM3E 36GB 12-high, as well as an actual 192GB SOCAMM2 product.
On the left side of the booth, SK hynix set up a display where visitors could view its next-generation server DRAM and SSD lineup in one place. The server DRAM products included the 256GB 3DS RDIMM, which delivers the industry's highest capacity for AI workloads; the high-bandwidth 128GB MRDIMM; and the 64GB RDIMM, the world's first product to apply a 10-nanometer-class sixth-generation (1c) process.
In addition, at the forum, SK hynix was selected by TSMC as the recipient of the Partner of the Year award in the 3DFabric-HBM Integration category. It was the company's second consecutive win following last year, and this year's award recognized its collaboration with TSMC in validating HBM5 based on CoWoS to advance next-generation AI systems.
The company explained, "HBM is increasing the number of stacked layers and its bandwidth with each generation. To fully realize these advances in performance, close integration with advanced packaging technology that integrates HBM into actual AI accelerators is essential," adding, "SK hynix's PKG development organization and TSMC have conducted joint validation in this area from the early stages, laying the foundation for next-generation AI systems. This collaborative relationship led to the award."
[email protected] Im Su-bin Reporter