Samsung Electronics Wins Two Awards for Next-Gen Memory at U.S. FMS

[Financial News] Samsung Electronics said on the 6th that it won two awards at the global memory technology conference FMS 2026 in recognition of its next-generation memory technologies.
Samsung Electronics received the 3D NAND Innovation Award for its V10 BV-NAND and the Next-Gen Memory Award for its LPDDR5X-PIM.
V10 BV-NAND is a next-generation V-NAND technology that achieves an ultra-high stacking structure of more than 400 layers. It uses bonding vertical (BV) technology, which vertically bonds wafers, and a 3-stack structure that connects V-NAND cells in three layers. This increases storage capacity while reducing power consumption and heat generation.
LPDDR5X-PIM is a next-generation memory product that applies Processing-in-Memory (PIM) technology to LPDDR5X, a low-power DRAM, for the first time in the world. It is seen as a key technology for AI accelerators and high-performance computing (HPC). By processing data within the memory itself and then sending only the necessary results to the processor, it minimizes data movement inside the system, improving performance and power efficiency while reducing bottlenecks in AI computing.
Samsung Electronics plans to showcase its next-generation memory roadmap, AI memory solutions, and next-generation storage technologies at FMS 2026, which runs through the 6th local time.
  


[email protected] Jo Eun-hyo Reporter